This article noted: ● Both parties have signed an integrated development agreement for Gallium Nitride (GAN) technology, focusing on the creation of future-focused electronic technologies, etc. and 8-inches high-performance low-cost silicon-based gallium nitride (gan-on-si), a global manufacturing leader, which combines the sign of a gallium nitride technology development and manufacturing agreement.双方都将为他们的利益提供全面的作用，以提高氮化碳电源解决方案的竞争力和供应链弹性。根据该协议，两党将共同努力促进氮化甲带电力技术的联合开发计划，并共同促进了未来几年中电子消费者，中心，车辆，电动系统等领域对广泛技术应用的明显期望。此外，根据协议，Innosecco可以使用stricroelectronics生产镀锌中国以外的氮化物晶片和strecroelectronics的正面制造能力也可以使用Innosecco开发自己的氮化甲壳甲硅盐中国。双方的共同目的是依靠该供应链的灵活布局来扩展其硝酸盐产品组合和市场供应能力，提高供应链的稳定性，从而在更广泛的应用程序屏幕范围内满足各种客户需求。 Marco, president of Stmicroelectronics Analog, Power and Discrete Device, MEMS and Sensor Products (APMs), saidCassis: "ST Stmicroelectronics and Innosec are both vertically integrated with device manufacturers (IDMs). This cooperation will maximize the benefits of IDM model and create value for global customers. Technology to further improve the existing silicon and silicon product portfolio; “Gan technology is essential for achieving较小，高效率，低功耗，低成本和低碳二氧化电子系统。与Stmicroelectronics的战略合作。体积和重量，从而降低了一般解决方案的成本和碳足迹。当前，氮化炮功率设备在电子消费者，数据中心，工业电源和光伏逆变器的领域中迅速受到人们的影响，并且由于它们的显着优势是轻量级的，因此积极地激活了下一代电力的电力。